Technique process of growth of the polycrystalline silicon is based on the adjustment of the heating chamber.
多晶硅锭的生长工艺过程都要通过加热室的调整来实现。
The equipment adopts the technology of directional solidification, producing polycrystalline silicon ingots through melting and directional crystal growth in a period of approximate 60 hours.
该设备应用定向固化技术，经融化、定向晶体生长，通过60小时左右铸成多晶硅铸锭。
The invention discloses a technology for the directional solidification growth of polycrystalline silicon ingot, belonging to the preparation of semiconductor material silicon crystal.
一种定向凝固生长多晶硅锭工艺，本发明属于半导体材料硅晶体的制备。
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